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TSD2098A
Low Vcesat NPN Transistor
SOT-89
Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) 100V 20V 5A 0.35V @ IC / IB = 3A / 100mA
Features
Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics
Ordering Information
Part No.
TSD2098ACY RM
Package
SOT-89
Packing
1Kpcs / 7" Reel
Structure
Epitaxial Planar Type NPN Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation DC Pulse
Symbol
VCBO VCES VCEO VEBO IC PD
Limit
100 95 20 6 5 8 (note1) 0.6 1 (note 2) 2 (note 3) +150 - 55 to +150
Unit
V V V V A W
o o
Operating Junction Temperature TJ Operating Junction and Storage Temperature Range TSTG Note: 1. Single pulse, Pw = 10mS 2. Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm x 10mm. 3. When mounted on a 40 x 40 x 0.7mm ceramic board
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
Conditions
Symbol
BVCBO BVCES BVCEO BVEBO ICBO IEBO VCE(SAT) VCE(SAT) hFE hFE hFE fT Cob
Min
100 95 20 6 ----230 260 150 ---
Typ
----0.35 -0.35 ----150 30
Max
----0.5 0.5 1.0 1.0 -780 --50
Unit
V V V V uA uA V
IC = 50uA, IE = 0 IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 3A, IB = 100mA Collector-Emitter Saturation Voltage IC = 3A, IB = 60mA VCE = 2V, IC = 20mA DC Current Transfer Ratio VCE = 2V, IC = 500mA VCE = 2V, IC = 2A VCE =6V, IC=50mA, Transition Frequency f=100MHz Output Capacitance VCB = 20V, f=1MHz Note: Pulse test: pulse width 380uS, Duty cycle2% 1/4
MHz pF
Version: A07
TSD2098A
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
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Version: A07
TSD2098A
Low Vcesat NPN Transistor
SOT-89 Mechanical Drawing
DIM A B C D E F G H I J
SOT-89 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.40 4.60 0.173 0.181 1.50 1.7 0.059 0.070 2.30 2.60 0.090 0.102 0.40 0.52 0.016 0.020 1.50 1.50 0.059 0.059 3.00 3.00 0.118 0.118 0.89 1.20 0.035 0.047 4.05 4.25 0.159 0.167 1.4 1.6 0.055 0.068 0.35 0.44 0.014 0.017
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Version: A07
TSD2098A
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: A07

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